Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
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DOI: 10.1016/j.materresbull.2021.111258
Abstract: Abstract The lighting industry undergoes a revolutionizing transformation with the introduction of III-nitride semiconductors, and "LEDs" became a household name. The solid-state light source GaN/InGaN replaced incandescent and compact fluorescent lamps. The UV region (∼200−400… read more here.
Keywords: challenges algan; based ultra; algan based; recent advances ... See more keywords