Challenges in modulation doping of n-type Ge/SiGe heterostructures: The role of epitaxial and thermal strain
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DOI: 10.1063/5.0259848
Abstract: N-type Ge-rich Ge/SiGe multi-quantum-wells on Si(001) substrates are a novel material system with great potential due to their compatibility with the CMOS standard. This class of strained quantum heterostructures exhibits different band edge minima in… read more here.
Keywords: sige; modulation doping; type; challenges modulation ... See more keywords