Defect concentration and Δn change in light- and elevated temperature-induced degradation
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DOI: 10.1088/1361-6463/ac34a8
Abstract: The wide variety of silicon materials used by various groups to investigate LeTID make it difficult to directly compare the defect concentrations (N t) using the typical normalised defect density (NDD) metric. Here, we propose… read more here.
Keywords: degradation; concentration change; physics; defect concentration ... See more keywords