Projected Mushroom Type Phase‐Change Memory
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202106547
Abstract: Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities… read more here.
Keywords: phase; phase change; change memory; mushroom type ... See more keywords
Toward the Speed Limit of Phase‐Change Memory
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202208065
Abstract: Phase‐change memory (PCM) is one of the most promising candidates for next‐generation data‐storage technology, the programming speed of which has enhanced within a timescale from milliseconds to sub‐nanosecond (≈500 ps) through decades of effort. As… read more here.
Keywords: speed; change memory; phase change;
Reliability Modelling and Prediction Method for Phase Change Memory Using Optimal Pulse Conditions
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Shanghai Jiaotong University (Science)"
DOI: 10.1007/s12204-020-2153-8
Abstract: Phase change memory (PCM) has reached the level of mass production. The first step in mass production is determining the proper pulse conditions of high-resistance (HR) and low-resistance (LR) states to realize the best performance… read more here.
Keywords: phase change; change memory; optimal pulse; method ... See more keywords
RESET current optimization for phase change memory based on the sub-threshold slope
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.03.003
Abstract: Abstract The RESET current (Irst) is a key parameter to characterize power consumption and reliability of phase change memory (PCM) device. And the Optimization of Irst is a classic issue in the investigation of PCM… read more here.
Keywords: optimization; reset current; change memory; phase change ... See more keywords
Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108111
Abstract: Abstract In this paper we compare the performances of SiN with respect to an optimized SiC encapsulation in Wall based Phase-Change Memory (PCM) integrating a Ge-rich Ge-Sb-Te alloy (GGST) suitable for high temperature stability in… read more here.
Keywords: change memory; engineering; phase change; electro thermal ... See more keywords
Scalable CGeSbTe-based phase change memory devices employing U-shaped cells
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.04.048
Abstract: Abstract Phase change memory (PCM) that is operated on resistance changes caused by joule heating has been suggested as the next-generation memory for scaling since its programming current scales linearly. We propose a U-shaped cell… read more here.
Keywords: reset current; phase change; shaped cell; change memory ... See more keywords
Chemical Design Principles for Cache-Type Sc–Sb–Te Phase-Change Memory Materials
Sign Up to like & getrecommendations! Published in 2019 at "Chemistry of Materials"
DOI: 10.1021/acs.chemmater.9b00510
Abstract: Enhanced crystal nucleation in a Sc–Sb–Te phase-change material has enabled subnanosecond switching in phase-change memory devices, making cache-type nonvolatile memory feasible. However, the microscopic mechanisms remain to be further explored. In this work, we present… read more here.
Keywords: change memory; phase; phase change; cache type ... See more keywords
Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c01869
Abstract: Superlattice (SL) phase change materials have shown promise to reduce the switching current and resistance drift of phase change memory (PCM). However, the effects of internal SL interfaces and intermixing on PCM performance remain unexplored,… read more here.
Keywords: change memory; interfaces intermixing; phase change; phase ... See more keywords
An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c12575
Abstract: In valence change memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurately simulating the switching dynamics of these devices can… read more here.
Keywords: change; change memory; valence change; field induced ... See more keywords
Amorphous to Crystal Phase Change Memory Effect with Two-Fold Bandgap Difference in Semiconducting K2Bi8Se13.
Sign Up to like & getrecommendations! Published in 2021 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.1c01484
Abstract: Chalcogenide-based phase change memory (PCM) is a key enabling technology for optical data storage and electrical nonvolatile memory. Here, we report a new phase change chalcogenide consisting of a 3D network of ionic (K···Se) and… read more here.
Keywords: change memory; kbs; memory; phase change ... See more keywords
Recipe for ultrafast and persistent phase-change memory materials
Sign Up to like & getrecommendations! Published in 2020 at "NPG Asia Materials"
DOI: 10.1038/s41427-020-00246-z
Abstract: The contradictory nature of increasing the crystallization speed while extending the amorphous stability for phase-change materials (PCMs) has long been the bottleneck in pursuing ultrafast yet persistent phase-change random-access memory. Scandium antimony telluride alloy (ScxSb2Te3)… read more here.
Keywords: change memory; persistent phase; phase; phase change ... See more keywords