Velocity overshoot degradation in short-channel AlGaAs/GaAs HEMTs due to the minimum electron acceleration lengths
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DOI: 10.3938/jkps.71.355
Abstract: Short-channel AlGaAs/GaAs High Electron Mobility Transistors (HEMTs) with gate lengths ranging up to 10 nm were fabricated using electron-beam lithography process. Transconductance starts to rise rapidly as the gate length becomes on the order of… read more here.
Keywords: short channel; velocity; acceleration; channel algaas ... See more keywords