3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination
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DOI: 10.1109/led.2020.3005934
Abstract: This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of $115~\Omega $ /sq. A novel edge termination based on regrown p-GaN is proposed to manage… read more here.
Keywords: algan gan; gan schottky; multi channel; schottky barrier ... See more keywords