Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0275349
Abstract: In this work, high-performance double-channel AlGaN/GaN Schottky barrier diodes with AlN super back barrier are demonstrated, and the corresponding current transport mechanisms at various anode bias voltages are studied. Benefiting from the electric field-modulated GaN… read more here.
Keywords: double channel; gan schottky; schottky barrier; channel algan ... See more keywords
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3005934
Abstract: This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of $115~\Omega $ /sq. A novel edge termination based on regrown p-GaN is proposed to manage… read more here.
Keywords: algan gan; gan schottky; multi channel; schottky barrier ... See more keywords