High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring.
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DOI: 10.1021/acsami.0c21979
Abstract: The development of p-type metal-oxide semiconductors (MOSs) is of increasing interest for applications in next-generation optoelectronic devices, display backplane, and low-power-consumption complementary MOS circuits. Here, we report the high performance of solution-processed, p-channel copper-tin-sulfide-gallium oxide… read more here.
Keywords: solution processed; copper tin; performance solution; channel copper ... See more keywords