Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations
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DOI: 10.1063/1.5100328
Abstract: We investigated the phosphorus concentration (NP) dependence of the field-effect mobility μFE and interface state density Dit in inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). The inversion channel diamond MOSFETs are potentially applicable in high-frequency,… read more here.
Keywords: dit; inversion channel; diamond; channel diamond ... See more keywords