Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(1 1 0) on the channel direction and the strained Si thickness
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DOI: 10.1016/j.jcrysgro.2021.126246
Abstract: Abstract Strained Si/relaxed SiGe/Si(1 1 0) heterostructures are gaining interest as an attractive candidate for a Si-wafer-based material for semiconductor devices with enhanced performances and lower power consumption, since a significant enhancement of the hole mobility has… read more here.
Keywords: mobility; dependences hole; direction strained; hole mobility ... See more keywords