Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000395
Abstract: 2D transition metal dichalcogenides (TMDs) are promising semiconductive films for applications in future devices due to their prosperous and tunable band structures. However, most TMD‐based top gate transistors suffer from a significant doping effect in… read more here.
Keywords: gate; channel doping; field effect; effect ... See more keywords
Analytical Study of Effect of Channel Doping on Threshold Voltage of Metal Gate High-k SiGe MOSFET
Sign Up to like & getrecommendations! Published in 2017 at "Silicon"
DOI: 10.1007/s12633-017-9631-0
Abstract: The paper reports the analytical model for the analysis of the effects of channel doping on the threshold voltage. A silicon germanium p-MOSFET with high-k dielectric material along with a metal gate is used for… read more here.
Keywords: mosfet; threshold voltage; channel doping; doping threshold ... See more keywords
Novel high-performance SOI junctionless FET-based phototransistor using channel doping engineering: Numerical investigation and sensitivity analysis
Sign Up to like & getrecommendations! Published in 2017 at "Optik"
DOI: 10.1016/j.ijleo.2017.03.071
Abstract: Abstract In this paper, graded channel doping (GCD) and junctionless paradigms are proposed as a new ways to improve the optical controlled field effect transistor (OCFET) and bridging the gap between the high responsivity and… read more here.
Keywords: junctionless; channel doping; sensitivity; performance ... See more keywords
Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.01.003
Abstract: Abstract The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a… read more here.
Keywords: impact fin; doping concentrations; channel doping; junctionless transistors ... See more keywords