Study of drain-induced channel effects in vertical GaN junction field-effect transistors
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad462a
Abstract: A normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) is demonstrated in this work. The device shows an on/off current ratio of 3.6 × 1010, a threshold voltage (V TH) of 1.64 V, and… read more here.
Keywords: channel effects; drain induced; gan junction; field effect ... See more keywords
Spectrum and decay properties of the charmed mesons involving the coupled channel effects
Sign Up to like & getrecommendations! Published in 2024 at "Physical Review D"
DOI: 10.1103/physrevd.111.094024
Abstract: The mass spectrum of the charmed mesons is investigated by considering the coupled channel effects within the nonrelativistic potential model. The predicted masses of the charmed mesons are in agreement with experimental data. The strong… read more here.
Keywords: channel effects; coupled channel; predicted masses; decay properties ... See more keywords
How large is the contribution of excited mesons in coupled-channel effects?
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review D"
DOI: 10.1103/physrevd.95.034018
Abstract: We study the excited $B$ mesons' contributions to the coupled-channel effects under the framework of ${}^3P_0$ model for the bottomonium. Contrary to what has been widely accepted, the contributions of $P$ wave $B$ mesons are… read more here.
Keywords: large contribution; contribution excited; excited mesons; mesons coupled ... See more keywords
Universality of Short-Channel Effects on Ultrascaled MOSFET Performance
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2784099
Abstract: Universality of short-channel effects on saturation current of MOSFETs has been demonstrated. The modulations of carrier injection and transmission rate have been integrated into universal functions. The proposed form has been verified by a large… read more here.
Keywords: short channel; ultrascaled mosfet; channel; universality short ... See more keywords
Analysis of Short-Channel Effects in Junctionless DG MOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2716969
Abstract: This brief investigates short-channel effects (SCEs) in junctionless (JL) double-gate (DG) MOSFETs analytically by solving the 2-D potential in subthreshold. ${\mathrm {I}}_{\mathsf {ds}}-{\mathrm {V}}_{\mathrm {{g}}}$ curves and ${\mathrm {V}}_{\mathrm {{t}}}$ rolloff generated from the model… read more here.
Keywords: short channel; channel effects; tex math; mathrm ... See more keywords
Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2805716
Abstract: Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact… read more here.
Keywords: short channel; effects negative; negative capacitance; channel effects ... See more keywords
Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique
Sign Up to like & getrecommendations! Published in 2024 at "Nanomaterials"
DOI: 10.3390/nano14221817
Abstract: In this work, we present the novel application of SiNx stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mechanisms. The compressive stress… read more here.
Keywords: channel effects; suppression short; stress; short channel ... See more keywords