Study of line edge roughness on various types of gate-all-around field effect transistor
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DOI: 10.1088/1361-6641/ab52e4
Abstract: The impact of Line Edge Roughness (LER) on Gate-All-Around FETs (GAAFETs) with various channel types is investigated. Among various channel types of GAAFET, (i) nanowire (NW), (ii) nanosheet (NS), and (iii) stacked channel are investigated.… read more here.
Keywords: gaafet; edge roughness; effect; channel gaafet ... See more keywords