Investigation of Quantization Effects on RTS Due to Oxide Traps Induced by Channel Hot-Carrier-Stressing in pMOSFETs
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DOI: 10.1109/tdmr.2020.3018049
Abstract: Although it is the worst degradation mechanism, the effect of channel hot carrier (CHC) stressing on random telegraph signals (RTS) has not been given enough attention in pMOSFETs. We report on the effect of CHC… read more here.
Keywords: mobility; screened scattering; hot carrier; capture ... See more keywords
Impact of Channel Hot-Hole Stressing on Gate-Oxide Trap’s Emission
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DOI: 10.1109/ted.2020.3019982
Abstract: Fluctuating parametric shifts that arise from the stochastic capture/emission by oxide traps in small gate-area MOSFETs have triggered considerable interest due to their impact on timing-sensitive circuits. To date, studies have only reported the effect… read more here.
Keywords: impact channel; emission; chh stress; stress ... See more keywords