A new RF trench-gate multi-channel laterally-diffused MOSFET on InGaAs
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DOI: 10.1088/1674-4926/38/9/094001
Abstract: In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET (TGMC-LDMOS) on InGaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate… read more here.
Keywords: gate multi; multi; trench gate; channel laterally ... See more keywords