Channel length-dependent characterisations of organic thin-film transistors with solution processable gadolinium phthalocyanine derivatives
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-019-02486-4
Abstract: Spin-coated 52-nm-thick films of newly synthesised gadolinium liquid crystalline bisphthalocyanine sandwich (GdPc 2 ) complexes with octyl chains non-peripheral positions have been successfully employed as active layers for bottom-gate organic field effect transistors having both… read more here.
Keywords: channel length; dependent characterisations; length dependent; gadolinium ... See more keywords
Effect of matching between the magnetic field and channel length on the performance of low sputtering Hall thrusters
Sign Up to like & getrecommendations! Published in 2017 at "Advances in Space Research"
DOI: 10.1016/j.asr.2017.11.003
Abstract: Abstract Discharge characteristics of a non-wall-loss Hall thruster were studied under different channel lengths using a design based on pushing a magnetic field through a double permanent magnet ring. The effect of different magnetic field… read more here.
Keywords: matching magnetic; field; field channel; magnetic field ... See more keywords
Dependence of sensing performance of OTFT-based H2 sensor on channel length
Sign Up to like & getrecommendations! Published in 2021 at "International Journal of Hydrogen Energy"
DOI: 10.1016/j.ijhydene.2021.02.125
Abstract: Abstract For a hydrogen sensor based on organic thin-film transistor (OTFT) with palladium (Pd) source/drain (S/D) electrodes as the sensing medium, the effects of channel length on its sensing performance are investigated. When exposed to… read more here.
Keywords: hydrogen; sensing performance; length; sensor ... See more keywords
Direct patterning of silver electrodes with 2.4μm channel length by piezoelectric inkjet printing.
Sign Up to like & getrecommendations! Published in 2017 at "Journal of colloid and interface science"
DOI: 10.1016/j.jcis.2016.10.016
Abstract: The control of channel length is of great significance in the fabrication of thin film transistors (TFTs) with high-speed operation. However, achieving short channel on untreated glass by traditional piezoelectric inkjet printing is problematic due… read more here.
Keywords: piezoelectric inkjet; channel length; inkjet printing;
The dependence of optoelectric performance on channel length in photodetectors with MBE CdTe single-crystalline thin films on perovskite SrTiO3
Sign Up to like & getrecommendations! Published in 2020 at "Optical Materials"
DOI: 10.1016/j.optmat.2020.110276
Abstract: Abstract Photodetectors with molecular beam epitaxial CdTe single-crystalline films on SrTiO3 were fabricated by varying the channel length to optimize the response performance. Optoelectric properties were characterized by semiconductor characterization system and high-speed oscilloscope. Crucial… read more here.
Keywords: single crystalline; cdte single; response; channel length ... See more keywords
Downsizing the Channel Length of Vertical Organic Electrochemical Transistors.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c02049
Abstract: Organic electrochemical transistors (OECTs) are promising building blocks for bioelectronic devices such as sensors and neural interfaces. While the majority of OECTs use simple planar geometry, there is interest in exploring how these devices operate… read more here.
Keywords: electrochemical transistors; organic electrochemical; channel length; geometry ... See more keywords
Effects of channel length on temperature dependence of apparent subthreshold swing in self-aligned top-gate coplanar IGZO thin-film transistors
Sign Up to like & getrecommendations! Published in 2025 at "Scientific Reports"
DOI: 10.1038/s41598-025-18234-0
Abstract: This study investigates how channel length (L) affects the temperature dependence of the apparent subthreshold swing (SS*) in self-aligned top-gate coplanar indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). Our experimental results demonstrate that SS* increases with… read more here.
Keywords: apparent subthreshold; temperature dependence; dependence apparent; channel length ... See more keywords
Channel length scaling of over 100% biaxially stretchable carbon nanotube transistors
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5088358
Abstract: Deformable field effect transistors (FETs) are needed for future technologies such as stretchable electronics. We have previously integrated buckled networks of polymer-sorted semiconducting carbon... read more here.
Keywords: biaxially stretchable; carbon; channel length; length scaling ... See more keywords
Channel Length Optimization for Planar LDMOS Field-Effect Transistors for Low-Voltage Power Applications
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3008388
Abstract: We identify an optimum channel length for planar Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) field-effect transistors, in terms of the specific on-resistance, through systematic device simulation and optimization. We simulate LDMOS devices with different channel lengths ranging… read more here.
Keywords: low voltage; effect transistors; ldmos field; length ... See more keywords
The Characteristics and Reliability With Channel Length Dependent on the Deposited Sequence of SiO₂ and Si₃N₄ as PV in LTPS TFTs
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2024.3379743
Abstract: This study investigates the characteristics on different channel lengths for a sequence of Si3N4 and SiO2 deposition as PV of LTPS TFTs. After analyzing the subthreshold swing (SS) of the initial condition and change in… read more here.
Keywords: length; degradation; ltps tfts; sequence ... See more keywords
DIBL–Compensated Extraction of the Channel Length Modulation Coefficient in MOSFETs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2853699
Abstract: In this brief, a new channel length modulation (CLM) extraction method is proposed. The main innovation of this approach is that the extracted value of CLM is not artificially inflated by the contribution of the… read more here.
Keywords: extraction; length modulation; channel length;