Impact of the Channel Thickness on the Photoresponse of Black Arsenic Mid-Infrared Photodetectors.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c05704
Abstract: Recently explored black arsenic is a layered two-dimensional low-symmetry semiconducting material that, owing to its inherent narrow bandgap (∼0.31 eV) in its bulk form, is attractive for mid-infrared optoelectronics. Several studies have been conducted on… read more here.
Keywords: mid infrared; thickness photoresponse; black arsenic; channel thickness ... See more keywords
SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-68963-7
Abstract: Contactless electroreflectance studies coupled with numerical calculations are performed on in-situ SiNx capped N-polar III-nitride high electron mobility transistor (HEMT) structures with a scaled channel thickness in order to analyse the built-in electric field in… read more here.
Keywords: iii nitride; channel thickness; spectroscopy; polar iii ... See more keywords