Printed n- and p-Channel Transistors using Silicon Nanoribbons Enduring Electrical, Thermal, and Mechanical Stress
Sign Up to like & getrecommendations! Published in 2023 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.2c20569
Abstract: Printing technologies are changing the face of electronics with features such as resource-efficiency, low-cost, and novel form factors. While significant advances have been made in terms of organic electronics, the high-performance and stable transistors by… read more here.
Keywords: stress; channel transistors; transistors using; printed channel ... See more keywords
Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors.
Sign Up to like & getrecommendations! Published in 2020 at "Nanoscale"
DOI: 10.1039/c9nr09000b
Abstract: Three-dimensional (3D) integration is a promising strategy to integrate more functions into a given footprint. In this work, we report on a convenient new strategy to grow and integrate high density Si nanowire (SiNW) arrays… read more here.
Keywords: channel transistors; facile integration; stacked channel; integration nanowires ... See more keywords