Covered Source–Channel Tunnel Field-Effect Transistors With Trench Gate Structures
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DOI: 10.1109/tnano.2018.2882859
Abstract: We propose a new design for covered source–channel tunnel field-effect transistors (CSC-TFETs) with trench gate structures. The I–V characteristics, on/off current ratio, subthreshold swing, and band-to-band tunneling rate are analyzed using a commercial device simulator.… read more here.
Keywords: effect transistors; channel tunnel; tunnel field; field effect ... See more keywords