Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aafdbd
Abstract: This work investigated characteristics of Al2O3/native oxide/n-GaN MOS capacitors by post-metallization annealing (PMA). A native oxide interlayer which composed of e- and γ-Ga2O3 phases (Native oxide) and the reduced amount of one (Reduced) on n-GaN… read more here.
Keywords: characteristics al2o3; al2o3 native; native oxide; oxide ... See more keywords
Resistive Switching Characteristics of Al2O3 Film for Transparent Nonvolatile Memory
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2017.2723421
Abstract: Transparent resistive memory requires a transparent electrode and thin storage layer. In this letter, we highlight the importance of a dielectric and metal multilayer electrode for transparency with good flexible characteristics also. In particular, we… read more here.
Keywords: characteristics al2o3; resistive switching; resistive memory; switching characteristics ... See more keywords