The influence of surface barriers on the photoemission characteristics of AlGaN photocathodes
Sign Up to like & getrecommendations! Published in 2018 at "Optik"
DOI: 10.1016/j.ijleo.2017.12.019
Abstract: Abstract In order to research the photoemission characteristics of AlGaN photocathodes with different surface barrier structures, AlGaN photocathodes with varying Al composition were grown by MOCVD. The atomic composition of the photocathode surface was measured… read more here.
Keywords: photocathode; surface; characteristics algan; photoemission characteristics ... See more keywords
Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2018 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2018.04.006
Abstract: Abstract We studied how substrate thinning affected the electronic transport characteristics of AlGaN/GaN HEMTs. By thinning their sapphire substrate from 460 µm to 80 µm, we varied the residual stress in these HEMTs. The thinned sample showed… read more here.
Keywords: substrate thinning; transport characteristics; algan gan; characteristics algan ... See more keywords
2-D optimisation current–voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Ambient Energy"
DOI: 10.1080/01430750.2019.1608856
Abstract: ABSTRACT In the present work, the electrical characteristics of AlGaN/GaN high electron mobility transistors HEMTs is analysed using Nextnano device simulation software, The passivation layer which considered in this study, have been shown an important… read more here.
Keywords: voltage; passivation; passivation layer; algan gan ... See more keywords
Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I
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DOI: 10.1109/ted.2020.3034561
Abstract: Impact of surface traps on the breakdown characteristics of AlGaN/GaN HEMT devices is revealed using detailed TCAD computations and supporting experiments. Detailed mechanism explaining the role of surface traps in modulating channel electric field under… read more here.
Keywords: breakdown characteristics; surface; characteristics algan; traps breakdown ... See more keywords
Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study
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DOI: 10.3390/mi11010053
Abstract: In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device… read more here.
Keywords: operational characteristics; algan gan; characteristics algan; copper filled ... See more keywords
Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Express"
DOI: 10.7567/apex.11.054102
Abstract: We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture,… read more here.
Keywords: electrode corners; impact rounded; corners breakdown; characteristics algan ... See more keywords