Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors
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DOI: 10.1007/s13391-017-1606-1
Abstract: A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage… read more here.
Keywords: dependent characteristics; gan high; alinn gan; high electron ... See more keywords