Source-drain Resistance Characteristics of Back-channel Etched Amorphous InGaZnO Thin Film Transistors with TiO 2 :Nb Protective Layer
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DOI: 10.1016/j.mssp.2017.04.020
Abstract: Abstract This work investigates the source-drain (S-D) parasitic resistance (RSD) characteristics of the back-channel-etched (BCE) a-IGZO TFTs with ultra-thin Nb doped TiO2 (TNO) protective layer. It is shown that RSD is strongly related to the… read more here.
Keywords: tno; layer; source drain; characteristics back ... See more keywords