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Published in 2024 at "Micromachines"
DOI: 10.3390/mi15080993
Abstract: This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance characteristics…
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Keywords:
dynamic switching;
hemt devices;
test;
characteristics gan ... See more keywords
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Published in 2018 at "Lithuanian Journal of Physics"
DOI: 10.3952/physics.v58i2.3747
Abstract: An evolution of the transient characteristics of the GaN p-i-n diodes, operating in the avalanche mode and acting as particle sensors, has been simulated by using the Synopsys TCAD Sentaurus software package and the drift-diffusion…
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Keywords:
diode operating;
diode;
characteristics gan;
internal gain ... See more keywords