Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor
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DOI: 10.1007/s10854-018-9847-9
Abstract: The aim of present study is to improve the quality of Gd2O3/p-Si MOS structure by reducing interface trap charge density. Therefore, the ultra-thin SiO2 layer was grown to high-k/Si interface. The effect of the post… read more here.
Keywords: frequency; gd2o3 sio2; characteristics gd2o3; mos capacitor ... See more keywords