Analysis of the Forward I–V Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5916-8
Abstract: In this paper, the impact of silicon carbide intrinsic defect states, such as Z1/2 and EH6/7 centers, on the forward current–voltage curves of aluminum (Al)-implanted 4H-SiC p-i-n diodes is investigated by means of a physics-based… read more here.
Keywords: defect states; analysis forward; characteristics implanted; sic diodes ... See more keywords