Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure
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DOI: 10.1063/5.0140953
Abstract: We investigate the low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors (FeTFTs) with a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure. MFMIS FeTFTs are fabricated with different metal-to-FE area ratios (AM/AF's). It is revealed that the noise generation… read more here.
Keywords: gallium zinc; noise characteristics; low frequency; frequency noise ... See more keywords