Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces
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DOI: 10.3390/ma16093424
Abstract: Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects… read more here.
Keywords: luminescence characteristics; characteristics mocvd; intensity; gan structures ... See more keywords