Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.11.013
Abstract: Abstract We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in back-gated transistor mode, for future use as gas or biosensors. These devices featured P-type field-effect characteristics. It was found that… read more here.
Keywords: characteristics silicon; field; dispersion; field effect ... See more keywords
The paradox of characteristics of silicon detectors operated at temperature close to liquid helium
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5029533
Abstract: The aim of this study is to give characterization of silicon p+/n/n+ detectors for the monitoring systems of the Large Hadron Collider machine at CERN with the focus on justifying the choice of silicon resistivity… read more here.
Keywords: characteristics silicon; temperature; paradox characteristics; detectors operated ... See more keywords
Vacuum and Low-Temperature Characteristics of Silicon Oxynitride-Based Bipolar RRAM
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13040604
Abstract: This study investigates the switching characteristics of the silicon oxynitride (SiOxNy)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances at temperatures ranging from 300 K to 77 K. The operating ambiances (open air… read more here.
Keywords: silicon oxynitride; characteristics silicon; open air; temperature ... See more keywords