Analysis on charge-retention characteristics of sub-threshold synaptic IGZO thin-film transistors with defective gate oxides
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DOI: 10.1038/s41598-024-62872-9
Abstract: We provide a quantitative analysis on the charge-retention characteristics of sub-threshold operating In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) with a defective gate-oxide for low-power synaptic applications. Here, a defective SiO2 is incorporated as the synaptic gate-oxide… read more here.
Keywords: gate; retention characteristics; retention; characteristics sub ... See more keywords