Characterization of AlN and AlScN film ICP etching for micro/nano fabrication
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DOI: 10.1016/j.mee.2021.111530
Abstract: Abstract We investigate the inductively coupled plasma (ICP) etching characteristics of (0002) Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al0.94Sc0.06N) piezoelectric thin films as well as the implementation on piezoelectric lamb wave resonators. A profile… read more here.
Keywords: icp etching; aln alscn; characterization aln; alscn film ... See more keywords
Characterization of AlN-based ceramic composites for use as millimeter-wave susceptor materials at high temperature: Dielectric properties of AlN:Mo with 0.25 vol% to 4.0 vol% Mo from 25 to 550 °C
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Research"
DOI: 10.1557/jmr.2019.177
Abstract: read more here.
Keywords: composites use; ceramic composites; based ceramic; aln based ... See more keywords