Investigation of Junctionless Fin-FET Characterization in Deep Cryogenic Temperature: DC and RF analysis
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3228165
Abstract: This work presents the SOI Junctionless Fin-FET characterization in Deep Cryogenic behavior (DC-JLFET). Results show that the JLT device is well-suited for various operations, such as computation, sensing, and communication in the quantum field. The… read more here.
Keywords: fin fet; characterization deep; deep cryogenic; junctionless fin ... See more keywords
Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductors"
DOI: 10.1134/s1063782620100127
Abstract: In this work, GaN|AlGaN high electron mobility transistor (HEMT) structures are investigated, grown on semi-insulating SiC substrates by molecular beam epitaxy and metal–organic chemical-vapor deposition techniques. This paper reports on the kink effect and hysteresis… read more here.
Keywords: levels algan; characterization deep; algan gan; deep levels ... See more keywords