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Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6325-3
Abstract: The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and…
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Keywords:
distribution measured;
characterization dilute;
grown sample;
cathodoluminescence ... See more keywords