Electrothermal DC characterization of GaN on Si MOS-HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.08.002
Abstract: Abstract DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance,… read more here.
Keywords: methodology; mos hemts; temperature; electrothermal characterization ... See more keywords
Fast-Pulsed Characterization of RF GaN HEMTs in Lifetest Systems
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2016.2628717
Abstract: We report a new application of microsecond-pulsed current–voltage characterization of field-effect transistor (FET) devices; namely, in compact, mutlichannel DC and RF lifetest systems. This application is important for routine monitoring of trap-related signature parameters in… read more here.
Keywords: gan hemts; lifetest systems; characterization gan; pulsed characterization ... See more keywords