Cathodoluminescence Characterization of Point Defects Generated through Ion Implantations in 4H-SiC
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DOI: 10.3390/coatings13060992
Abstract: The high quality of crystal growth and advanced fabrication technology of silicon carbide (SiC) in power electronics enables the control of optically active defects in SiC, such as silicon vacancies (VSi). In this paper, VSi… read more here.
Keywords: cathodoluminescence characterization; point defects; cathodoluminescence; ion ... See more keywords