Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates
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DOI: 10.1063/5.0299401
Abstract: N-polar GaN heterostructure field-effect transistors (HFETs) promise performance and scaling advantages over conventional Ga-polar GaN-based devices for high-frequency applications. However, N-polar GaN epitaxy remains challenging and limited to smaller wafer diameters. In this work, N-polar… read more here.
Keywords: sapphire substrates; 200 sapphire; processing characterization; characterization polar ... See more keywords