Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements
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DOI: 10.1017/s1759078719000059
Abstract: Abstract Guaranteeing charge conservation of empirically extracted Gallium Nitride (GaN) High-Electron-Mobility Transistor (HEMT) models is necessary to avoid simulation issues and artifacts in the prediction. However, dispersive effects, such as thermal and charge-trapping phenomena, may… read more here.
Keywords: non isodynamic; gan hemt; charge conservative; multi bias ... See more keywords