Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition
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DOI: 10.1063/1.4986482
Abstract: The key feature for the precise tuning of Vth in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf) at the insulator/III-N interfaces, whose amount is often comparable… read more here.
Keywords: positive fixed; charge insulator; charge; fixed charge ... See more keywords