Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method
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DOI: 10.1109/access.2021.3102614
Abstract: Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of… read more here.
Keywords: near interface; integrated charge; method; mos capacitors ... See more keywords