Sign Up to like & get
recommendations!
0
Published in 2018 at "Nature Communications"
DOI: 10.1038/s41467-018-03577-2
Abstract: Noise and decoherence due to spurious two-level systems located at material interfaces are long-standing issues for solid-state quantum devices. Efforts to mitigate the effects of two-level systems have been hampered by a lack of knowledge…
read more here.
Keywords:
charge noise;
frequency;
noise;
superconducting resonators ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2022 at "Nature Communications"
DOI: 10.1038/s41467-022-28519-x
Abstract: Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving…
read more here.
Keywords:
charge noise;
spectroscopy;
exchange oscillations;
dynamically decoupled ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2019 at "Physical Review B"
DOI: 10.1103/physrevb.100.165305
Abstract: Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
read more here.
Keywords:
quantum dots;
charge noise;
noise;
sige quantum ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2021 at "Physical Review B"
DOI: 10.1103/physrevb.103.l161409
Abstract: Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been demonstrated in several types…
read more here.
Keywords:
charge noise;
coupled singlet;
magnetic field;
singlet triplet ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2018 at "Physical review letters"
DOI: 10.1103/physrevlett.121.076801
Abstract: We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley…
read more here.
Keywords:
charge noise;
temperature;
silicon quantum;
silicon ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2022 at "Physical review letters"
DOI: 10.1103/physrevlett.129.247701
Abstract: We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find…
read more here.
Keywords:
charge noise;
noise induced;
hole spin;
induced dephasing ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2022 at "Fluctuation and Noise Letters"
DOI: 10.1142/s0219477523500451
Abstract: An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance Gp and oxide trapped charge…
read more here.
Keywords:
charge noise;
trapped charge;
oxide trapped;