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Published in 2022 at "Small"
DOI: 10.1002/smll.202202153
Abstract: Development of a reliable doping method for 2D materials is a key issue to adopt the materials in the future microelectronic circuits and to replace the silicon, keeping the Moore's law toward the sub-10 nm channel…
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Keywords:
based charge;
heterojunction;
power;
charge plasma ... See more keywords
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Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00376-7
Abstract: In this paper, five layered Black Phosphorus (BP) – Silicon (Si) based Tunnel Field Effect Transistor (TFET) is used to overcome the thermionic limits faced by Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and analysis…
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Keywords:
charge plasma;
field effect;
effect transistor;
five layered ... See more keywords
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Published in 2018 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2018.08.023
Abstract: Abstract A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT.…
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Keywords:
junctionless transistor;
plasma based;
charge;
effect ... See more keywords
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Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2016.2622403
Abstract: To reduce the fabrication complexity and cost of the nanoscale devices, a charge-plasma concept is introduced for the first time to implement a dielectric-modulated junctionless tunnel field-effect transistor (DM-JLTFET) for biosensor label-free detection. The formation…
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Keywords:
biosensor;
modulated junctionless;
charge plasma;
label free ... See more keywords
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1
Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2812241
Abstract: In this paper, the charge-plasma structure over the source/drain region is incorporated into a dopingless junctionless transistor for obtaining the superior immunity of line edge roughness (LER). An optimized on/off current ratio is observed by…
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Keywords:
variation;
ler;
charge plasma;
tex math ... See more keywords
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1
Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2935342
Abstract: In this article, a charge-plasma (CP)-based gate-all-around (GAA) silicon vertical nanowire tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges (ITCs) on dopingless (DL) NW-based device have been addressed for the first…
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Keywords:
plasma based;
performance;
positive itcs;
charge plasma ... See more keywords
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2
Published in 2022 at "IEEE transactions on nanobioscience"
DOI: 10.1109/tnb.2022.3216505
Abstract: In this work, a novel design of ArcTFET based on Charge-Plasma and Gate-Stack (CP-GS-ArcTFET) is proposed for the first time. The precise detection of breast cancer biomarker (C-erbB-2) through serum should not be limited by…
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Keywords:
erbb serum;
charge;
breast cancer;
cancer biomarker ... See more keywords