Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and Ring Oscillator circuit
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DOI: 10.1016/j.aeue.2019.06.014
Abstract: Abstract In this paper, the reliability issues due to localized charges on Double Gate Junctionless Nanowire Transistor (DG-JNT) based circuits are investigated. The localized/fixed charges come into existence at the interface of substrate and oxide… read more here.
Keywords: charge profiles; double gate; nanowire transistor; circuit ... See more keywords