Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c04417
Abstract: Holes in silicon quantum dots are receiving attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing… read more here.
Keywords: hole double; charge sensing; quantum dots; charge ... See more keywords
Experimental Results of Electron Method for Remote Spacecraft Charge Sensing
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DOI: 10.1029/2019sw002341
Abstract: Remote charge sensing is a technique that can provide valuable insight into spacecraftâenvironment interactions, as well as enable missions that leverage electrostatic interactions between multiple spacecraft or involve docking maneuvers in harsh charging environments. The… read more here.
Keywords: experimental results; electron method; spacecraft; servicing spacecraft ... See more keywords
Single-electron charge sensing in self-assembled quantum dots
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DOI: 10.1038/s41598-018-31268-x
Abstract: Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots,… read more here.
Keywords: single electron; charge; self assembled; charge sensing ... See more keywords
Ambipolar charge sensing of few-charge quantum dots
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DOI: 10.1103/physrevb.101.201301
Abstract: We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor.… read more here.
Keywords: quantum dots; sensing charge; charge quantum; charge ... See more keywords