Charge-trapping memory device based on a heterostructure of MoS2 and CrPS4
Sign Up to like & getrecommendations! Published in 2021 at "Journal of the Korean Physical Society"
DOI: 10.1007/s40042-021-00154-7
Abstract: Atomically thin two-dimensional (2D) materials have emerged as promising candidates for flexible and transparent electronic applications. Here, we introduce non-volatile charge trapping memory devices, based on the 2D heterostructure field-effect transistor consisting of a few-layer… read more here.
Keywords: trapping memory; memory device; memory; charge trapping ... See more keywords
Conduction mechanisms and charge trapping control in SiO2 nanoparticle MIM capacitors
Sign Up to like & getrecommendations! Published in 2020 at "Electrochimica Acta"
DOI: 10.1016/j.electacta.2020.136202
Abstract: Abstract The objective of this paper is to present a charge trapping control method for MIM capacitors in which the dielectric is made of electrospray-deposited silica nanoparticles. The influence of the bias voltage on the… read more here.
Keywords: conduction mechanisms; trapping control; control; charge trapping ... See more keywords
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113488
Abstract: Abstract In this paper, we present a comprehensive analysis of the charge trapping mechanisms that affect the GaN based vertical Fin FETs when the devices are submitted to positive gate bias. Devices with higher channel… read more here.
Keywords: gate bias; trapping mechanisms; charge trapping; gate ... See more keywords
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
Sign Up to like & getrecommendations! Published in 2021 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2021.114255
Abstract: This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the trapping and… read more here.
Keywords: gan hemts; charge trapping; negative charge; trapping gan ... See more keywords
Inverse paired-pulse facilitation in neuroplasticity based on interface-boosted charge trapping layered electronics
Sign Up to like & getrecommendations! Published in 2020 at "Nano Energy"
DOI: 10.1016/j.nanoen.2020.105258
Abstract: Abstract Modern technology allows us to mimic biological functions with artificial devices. The human brain, including numerous neural cells that connect via synapses, enables us to handle complex tasks with ultra-low power consumption, which is… read more here.
Keywords: interface; paired pulse; charge trapping; pulse facilitation ... See more keywords
Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels
Sign Up to like & getrecommendations! Published in 2017 at "Vacuum"
DOI: 10.1016/j.vacuum.2016.12.042
Abstract: Abstract Operation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) charge-trapping (CT) flash memory devices with a SiGe and a Ge buried channel are studied and compared in this work. The poly-Si NW devices with a… read more here.
Keywords: trapping flash; nanowire charge; poly nanowire; charge trapping ... See more keywords
Control over Molecular Architectures of Carbohydrate-Based Block Copolymers for Stretchable Electrical Memory Devices
Sign Up to like & getrecommendations! Published in 2018 at "Macromolecules"
DOI: 10.1021/acs.macromol.8b00874
Abstract: We synthesized a series of new intrinsically stretchable block copolymers (BCPs) in linear AB-type, ABA-type, and star-shaped architectures composed of oligosaccharide (MH) and flexible poly(n-butyl acrylate) (PBA) blocks for the application in field-effect transistor memory.… read more here.
Keywords: charge trapping; memory devices; control molecular; block copolymers ... See more keywords
Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence
Sign Up to like & getrecommendations! Published in 2023 at "Nano Letters"
DOI: 10.1021/acs.nanolett.2c04004
Abstract: Time-resolved analysis of photon cross-correlation function g(2)(τ) is applied to photoluminescence (PL) of individual submicrometer size MAPbI3 perovskite crystals. Surprisingly, an antibunching effect in the long-living tail of PL is observed, while the prompt PL… read more here.
Keywords: photoluminescence; single charge; charge; charge trapping ... See more keywords
Charge Trapping in Amorphous Dielectrics for Secure Charge Storage.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c23083
Abstract: The fundamental scientific ingredient in the current information society is charge trapping in dielectric materials. The current data storage device known as NAND flash is based on charge trapping in silicon nitride, and it has… read more here.
Keywords: storage; secure charge; charge trapping; charge ... See more keywords
Molecular Doping Inhibits Charge Trapping in Low-Temperature-Processed ZnO toward Flexible Organic Solar Cells.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c23087
Abstract: There has been a growing interest in the development of efficient flexible organic solar cells (OSCs) due to their unique capacity to provide energy sources for flexible electronics. To this end, it is required to… read more here.
Keywords: organic solar; low temperature; temperature; flexible organic ... See more keywords
A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c20189
Abstract: Nonvolatile logic devices are crucial for the development of logic-in-memory (LiM) technology to build the next-generation non-von Neumann computing architecture. Ferroelectric field-effect transistors (Fe FET) are one of the most promising candidates for LiMs because… read more here.
Keywords: field effect; charge trapping; polarization switching; effect transistors ... See more keywords