Articles with "charge trapping" as a keyword



Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications

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Published in 2024 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202314649

Abstract: Artificial synaptic devices (ASDs) are attracting widespread attention as highly promising components for use in complex neuromorphic systems, playing crucial roles in addressing the challenges posed by the conventional von Neumann architecture. However, the instabilities… read more here.

Keywords: temperature; artificial synaptic; charge trapping; layered wide ... See more keywords

Layer‐Engineered Hybrid MoS 2 Nanosheets for Synergistic Charge Trapping and Superlubrication toward High‐Output Ultra‐Durable Triboelectric Nanogenerators

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Published in 2025 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202524763

Abstract: To address the low charge capture capacity and poor wear resistance of triboelectric materials, lithium‐ion intercalation is employed to synthesize monolayer–multilayer hybrid MoS 2 nanosheets. Density functional theory calculations elucidate layer‐dependent charge transfer and band… read more here.

Keywords: charge trapping; mos nanosheets; hybrid mos; ultra durable ... See more keywords

Rationally Improved Surface Charge Density of Triboelectric Nanogenerator with TiO2‐MXene/Polystyrene Nanofiber Charge Trapping Layer for Biomechanical Sensing and Wound Healing Application

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Published in 2024 at "Advanced Science"

DOI: 10.1002/advs.202404019

Abstract: Triboelectric nanogenerators (TENGs) have become reliable green energy harvesters by converting biomechanical motions into electricity. However, the inevitable charge leakage and poor electric field (EF) of conventional TENG result in inferior tribo‐charge density on the… read more here.

Keywords: charge trapping; polystyrene nanofiber; density; charge density ... See more keywords

Solution‐Processed Sterically Hindered Donor–Acceptor Small Molecules as Molecular Floating‐Gates for High‐Efficiency Ambipolar Charge Trapping Memory

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Published in 2025 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202500095

Abstract: The molecular floating‐gate transistor memories are fabricated by a simple spinning‐coating method using a small‐molecule material spiro[fluorene‐9,7′‐dibenzo[c,h]acridine]‐5′‐one (SFDBAO) as the trapping element. The molecule with donor–acceptor (D–A) structures contains naphthylamine and quinone‐like structures, which can… read more here.

Keywords: molecular floating; donor acceptor; memory; charge trapping ... See more keywords

Trivalent Ionic Molecular Bridges as Efficient Charge‐Trapping Method for All‐Solid‐State Organic Synaptic Transistors toward Neuromorphic Signal Processing Applications

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Published in 2024 at "Small Methods"

DOI: 10.1002/smtd.202401885

Abstract: Achieving high retention of memory state is crucial in artificial synapse devices for neuromorphic computing systems. Of various memorizing methods, a charge‐trapping method provides fast response times when it comes to the smallest size of… read more here.

Keywords: charge trapping; molecular bridges; trapping method; state ... See more keywords
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Charge-trapping memory device based on a heterostructure of MoS2 and CrPS4

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Published in 2021 at "Journal of the Korean Physical Society"

DOI: 10.1007/s40042-021-00154-7

Abstract: Atomically thin two-dimensional (2D) materials have emerged as promising candidates for flexible and transparent electronic applications. Here, we introduce non-volatile charge trapping memory devices, based on the 2D heterostructure field-effect transistor consisting of a few-layer… read more here.

Keywords: trapping memory; memory device; memory; charge trapping ... See more keywords
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Conduction mechanisms and charge trapping control in SiO2 nanoparticle MIM capacitors

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Published in 2020 at "Electrochimica Acta"

DOI: 10.1016/j.electacta.2020.136202

Abstract: Abstract The objective of this paper is to present a charge trapping control method for MIM capacitors in which the dielectric is made of electrospray-deposited silica nanoparticles. The influence of the bias voltage on the… read more here.

Keywords: conduction mechanisms; trapping control; control; charge trapping ... See more keywords

Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias

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Published in 2019 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2019.113488

Abstract: Abstract In this paper, we present a comprehensive analysis of the charge trapping mechanisms that affect the GaN based vertical Fin FETs when the devices are submitted to positive gate bias. Devices with higher channel… read more here.

Keywords: gate bias; trapping mechanisms; charge trapping; gate ... See more keywords

Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

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Published in 2021 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2021.114255

Abstract: This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the trapping and… read more here.

Keywords: gan hemts; charge trapping; negative charge; trapping gan ... See more keywords
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Inverse paired-pulse facilitation in neuroplasticity based on interface-boosted charge trapping layered electronics

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Published in 2020 at "Nano Energy"

DOI: 10.1016/j.nanoen.2020.105258

Abstract: Abstract Modern technology allows us to mimic biological functions with artificial devices. The human brain, including numerous neural cells that connect via synapses, enables us to handle complex tasks with ultra-low power consumption, which is… read more here.

Keywords: interface; paired pulse; charge trapping; pulse facilitation ... See more keywords

Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels

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Published in 2017 at "Vacuum"

DOI: 10.1016/j.vacuum.2016.12.042

Abstract: Abstract Operation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) charge-trapping (CT) flash memory devices with a SiGe and a Ge buried channel are studied and compared in this work. The poly-Si NW devices with a… read more here.

Keywords: trapping flash; nanowire charge; poly nanowire; charge trapping ... See more keywords