First-principles simulation of neutral and charged oxygen vacancies in m-ZrO2: an origin of filamentary type resistive switching
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DOI: 10.1088/1361-6528/ac70e5
Abstract: Metal oxide ZrO2 has been widely explored for resistive switching application due to excellent properties like high ON/OFF ratio, superior data retention, and low operating voltage. However, the conduction mechanism at the atomistic level is… read more here.
Keywords: charged oxygen; energy; resistive switching; oxygen ... See more keywords