Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices
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DOI: 10.1109/tdmr.2021.3073473
Abstract: This work reports on charging damage induced by gate antennae in high- $\kappa $ (HK) Replacement Metal Gate (RMG) technology for the HK-first and HK-last integration flows, comparing plate and comb layouts. For the HK-first… read more here.
Keywords: charging damage; rmg; first last; damage ... See more keywords