Impact of Channel Hot-Hole Stressing on Gate-Oxide Trap’s Emission
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3019982
Abstract: Fluctuating parametric shifts that arise from the stochastic capture/emission by oxide traps in small gate-area MOSFETs have triggered considerable interest due to their impact on timing-sensitive circuits. To date, studies have only reported the effect… read more here.
Keywords: impact channel; emission; chh stress; stress ... See more keywords