A 40-nm MLC-RRAM Compute-in-Memory Macro With Sparsity Control, On-Chip Write-Verify, and Temperature-Independent ADC References
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DOI: 10.1109/jssc.2022.3163197
Abstract: Resistive random access memory (RRAM)-based compute-in-memory (CIM) has shown great potential for accelerating deep neural network (DNN) inference. However, device characteristics, such as low-resistance values, susceptibility to drift, and single-level cells, may limit the capabilities… read more here.
Keywords: chip write; sparsity; write verify; memory ... See more keywords