A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3010154
Abstract: Silicon carbide (SiC) power MOSFETs have been commercialized to replace silicon insulated gate bipolar transistors (IGBTs) in power conversion applications. However, the short-circuit ruggedness of SiC power MOSFETs must be enhanced to match that of… read more here.
Keywords: power mosfets; power; short circuit; sic power ... See more keywords