Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl2 + Ar inductively coupled plasma with various HBr/Cl2 mixing ratios
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DOI: 10.1016/j.tsf.2018.05.018
Abstract: Abstract The study of InP etching kinetics as well as the evaluation of InP etching mechanism in HBr + Cl2 + Ar inductively coupled plasma were carried out. Experiments on the measurements of the etching rates for InP, SiO2,… read more here.
Keywords: hbr cl2; cl2; cl2 inductively; inp etching ... See more keywords