Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.145957
Abstract: Abstract An electrochemical etching-enhanced CMP process was proposed to realize the highly efficient and damage-free finishing of GaN. In this process, electrochemical etching was first used to remove the damaged layer induced by grinding or… read more here.
Keywords: enhanced cmp; etching; electrochemical etching; etching enhanced ... See more keywords
Femtosecond laser modification of silicon carbide substrates and its influence on CMP process
Sign Up to like & getrecommendations! Published in 2021 at "Ceramics International"
DOI: 10.1016/j.ceramint.2021.01.188
Abstract: Abstract Silicon carbide (SiC) is one of the most promising third-generation semiconductor materials owing to its superior comprehensive performances. However, high-efficient polishing of the hard-to-process SiC substrate remains a challenge due to its high hardness… read more here.
Keywords: femtosecond laser; surface; process; cmp process ... See more keywords
Atomistic mechanisms of Si chemical mechanical polishing in aqueous H2O2: ReaxFF reactive molecular dynamics simulations
Sign Up to like & getrecommendations! Published in 2017 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2017.02.005
Abstract: Abstract ReaxFF reactive molecular dynamics simulations are employed to study the process of the silica abrasive particle sliding on the Si (1 0 0) substrate in the aqueous H2O2 in order to clarify the atomistic mechanisms of… read more here.
Keywords: reactive molecular; aqueous h2o2; process; reaxff reactive ... See more keywords
Effect of Controlling Abrasive Size in Slurry for Tungsten Contact CMP Process
Sign Up to like & getrecommendations! Published in 2019 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2.0311905jss
Abstract: Tungsten contact chemical mechanical polishing is a critical process in advanced node semiconductor device manufacturing that enables metal interconnection. It is essential for device performance, and any defects caused by the tungsten CMP process have… read more here.
Keywords: slurry; cmp process; abrasive size; tungsten contact ... See more keywords